onsemi · FETs & Power MOSFETs · MPN NTMD5838NLR2G
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| Gate Charge(Qg) | 17nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 8.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | - |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 785pF |
40V 8.9A 1.8V 3W 2 N-Channel SO-8 Single FETs, MOSFETs RoHS