onsemi · FETs & Power MOSFETs · MPN NTMD4N03R2G
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| Current - Continuous Drain(Id) | 4A |
|---|---|
| RDS(on) | 48mΩ@10V |
| Pd - Power Dissipation | 2W |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 400pF |
| Gate Charge(Qg) | 16nC@10V |
| Vgs | ±20V |
| Operating Temperature | -55℃~+150℃ |
N-Channel Array 30V 4A 2W Surface Mount SOIC-8