onsemi NTMD4820NR2G

onsemi · FETs & Power MOSFETs · MPN NTMD4820NR2G

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Specifications

Gate Charge(Qg)7.7nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)6.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.28W
Reverse Transfer Capacitance (Crss@Vds)125pF
RDS(on)15mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)940pF

Technical details

30V 6.4A 3V 1.28W 15mΩ@10V 1 N-channel SOIC-8 Single FETs, MOSFETs RoHS

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