onsemi NTMD3P03R2G

onsemi · FETs & Power MOSFETs · MPN NTMD3P03R2G

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Specifications

Current - Continuous Drain(Id)2.34A
RDS(on)-
Pd - Power Dissipation730mW
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage30V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)135pF
Number2 P-Channel
Input Capacitance(Ciss)750pF
Gate Charge(Qg)25nC@10V
Operating Temperature-
Output Capacitance(Coss)325pF

Technical details

P-Channel 30V Surface Mount SOIC-8

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