onsemi · FETs & Power MOSFETs · MPN NTMC083NP10M5L
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| Current - Continuous Drain(Id) | 4.5A |
|---|---|
| Pd - Power Dissipation | 3.1W |
| RDS(on) | 83mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Drain to Source Voltage | 100V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 525pF |
| Gate Charge(Qg) | 8.4nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 88pF |
4.5A 3.1W 83mΩ@10V 4V 1 N-Channel + 1 P-Channel SOIC-8 FET, MOSFET Arrays RoHS