onsemi NTLJS4114NT1G

onsemi · FETs & Power MOSFETs · MPN NTLJS4114NT1G

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)13nC@4.5V
Current - Continuous Drain(Id)7.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation3.3W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)55mΩ@1.8V
Number1 N-channel
Input Capacitance(Ciss)650pF
TypeN-Channel

Technical details

N-Channel 30V 7.8A 3.3W Surface Mount WDFN-6(2x2)

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