onsemi · FETs & Power MOSFETs · MPN NTLJS3180PZTBG
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| Gate Charge(Qg) | 13nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 180pF |
| Current - Continuous Drain(Id) | 7.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF |
| RDS(on) | 200mΩ@1.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.1nF |
| Type | P-Channel |
20V 7.7A 1V 1.9W 200mΩ@1.5V 1 P-Channel P-Channel WDFN-6(2x2) Single FETs, MOSFETs RoHS