onsemi NTLJS3180PZTBG

onsemi · FETs & Power MOSFETs · MPN NTLJS3180PZTBG

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Specifications

Gate Charge(Qg)13nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)7.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.9W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)200mΩ@1.5V
Number1 P-Channel
Input Capacitance(Ciss)1.1nF
TypeP-Channel

Technical details

20V 7.7A 1V 1.9W 200mΩ@1.5V 1 P-Channel P-Channel WDFN-6(2x2) Single FETs, MOSFETs RoHS

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