onsemi NTLJS3113PT1G

onsemi · FETs & Power MOSFETs · MPN NTLJS3113PT1G

No reviews yet — be the first to review onsemi NTLJS3113PT1G.

Specifications

Drain to Source Voltage20V
Gate Charge(Qg)15.7nC@4.5V
Current - Continuous Drain(Id)3.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation-
RDS(on)40mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.329nF

Technical details

20V 3.5A 40mΩ@4.5V 1 P-Channel WDFN-6(2x2) Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs