onsemi NTLJS2103PTBG

onsemi · FETs & Power MOSFETs · MPN NTLJS2103PTBG

No reviews yet — be the first to review onsemi NTLJS2103PTBG.

Specifications

Gate Charge(Qg)15nC@4.5V
Drain to Source Voltage12V
Output Capacitance(Coss)300pF
Current - Continuous Drain(Id)7.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))800mV
Pd - Power Dissipation3.3W
Reverse Transfer Capacitance (Crss@Vds)200pF
RDS(on)40mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.157nF
TypeP-Channel

Technical details

12V 7.7A 800mV 3.3W 40mΩ@4.5V 1 P-Channel P-Channel WDFN-6(2x2) Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs