onsemi · FETs & Power MOSFETs · MPN NTLJS17D0P03P8ZTAG
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| Gate Charge(Qg) | 23nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 550pF |
| Current - Continuous Drain(Id) | 11.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 530pF |
| RDS(on) | 8.6mΩ@10V;21.3mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.6nF |
| Type | P-Channel |
30V 11.7A 1V 2.4W 1 P-Channel P-Channel WDFN-6(2x2) Single FETs, MOSFETs RoHS