onsemi NTLJF3117PT1G

onsemi · FETs & Power MOSFETs · MPN NTLJF3117PT1G

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Specifications

Gate Charge(Qg)6.2nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)3.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)56pF
RDS(on)200mΩ@1.8V
Number1 P-Channel
Input Capacitance(Ciss)531pF
TypeP-Channel

Technical details

P-Channel 20V 3.3A 1.5W Surface Mount WDFN-6-EP(2x2)

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