onsemi NTLJD4116NT1G

onsemi · FETs & Power MOSFETs · MPN NTLJD4116NT1G

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Specifications

Current - Continuous Drain(Id)4.6A
RDS(on)70mΩ@4.5V
Pd - Power Dissipation710mW
Gate Threshold Voltage (Vgs(th))700mV
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)32pF
Number2 N-Channel
Input Capacitance(Ciss)427pF
Gate Charge(Qg)5.4nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

4.6A 70mΩ@4.5V 710mW 700mV 2 N-Channel WDFN-6(2x2) FET, MOSFET Arrays RoHS

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