onsemi · FETs & Power MOSFETs · MPN NTLJD3119CTBG
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| Current - Continuous Drain(Id) | 4.1A |
|---|---|
| RDS(on) | 120mΩ@1.8V |
| Pd - Power Dissipation | 2.3W |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 20V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 43pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 271pF |
| Gate Charge(Qg) | 56nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 531pF |
N-Channel+P-Channel Array 20V 4.1A 2.3W Surface Mount WDFN-6(2x2)