onsemi · FETs & Power MOSFETs · MPN NTLJD3115PT1G
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| Configuration | Common source |
|---|---|
| Current - Continuous Drain(Id) | 4.1A |
| RDS(on) | 200mΩ@1.8V |
| Pd - Power Dissipation | 1.5W |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 20V |
| Reverse Transfer Capacitance (Crss@Vds) | 56pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 531pF |
| Gate Charge(Qg) | 6.2nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
4.1A 200mΩ@1.8V 1.5W 1V 2 P-Channel WDFN-6-EP(2x2) FET, MOSFET Arrays RoHS