onsemi NTK3139PT1G

onsemi · FETs & Power MOSFETs · MPN NTK3139PT1G

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage20V
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)780mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation450mW
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)480mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)170pF
TypeP-Channel

Technical details

P-Channel 20V 780mA 450mW Surface Mount SOT-723

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