onsemi NTJS4151PT1G

onsemi · FETs & Power MOSFETs · MPN NTJS4151PT1G

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Specifications

Gate Charge(Qg)10nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)160pF
Current - Continuous Drain(Id)4.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)110pF
RDS(on)60mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)850pF
TypeP-Channel

Technical details

P-Channel 20V 4.2A 1W Surface Mount SC-88

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