onsemi NTJS3157NT1G

onsemi · FETs & Power MOSFETs · MPN NTJS3157NT1G

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Specifications

Gate Charge(Qg)15nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1W
RDS(on)70mΩ@1.8V
Number1 N-channel
Input Capacitance(Ciss)500pF
TypeN-Channel

Technical details

N-Channel 20V 4A 1W Surface Mount SC-88

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