onsemi NTJS3151PT1G

onsemi · FETs & Power MOSFETs · MPN NTJS3151PT1G

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Specifications

Gate Charge(Qg)8.6nC@4.5V
Drain to Source Voltage12V
Current - Continuous Drain(Id)3.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation625mW
Reverse Transfer Capacitance (Crss@Vds)110pF
RDS(on)60mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)850pF
TypeP-Channel

Technical details

P-Channel 12V 3.3A 0.625W Surface Mount SC-88

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