onsemi · FETs & Power MOSFETs · MPN NTJD5121NT1G
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| Current - Continuous Drain(Id) | 295mA |
|---|---|
| RDS(on) | 1.6Ω@10V |
| Pd - Power Dissipation | 250mW |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 60V |
| Type | N-Channel |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 26pF |
| Gate Charge(Qg) | 900pC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | - |
N-Channel Array 60V 295mA 250mW Surface Mount SC-88