onsemi NTJD4401NT1G

onsemi · FETs & Power MOSFETs · MPN NTJD4401NT1G

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Specifications

Current - Continuous Drain(Id)910mA
Pd - Power Dissipation550mW
RDS(on)375mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage20V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)5pF
Number2 N-Channel
Input Capacitance(Ciss)46pF
Gate Charge(Qg)3nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)22pF

Technical details

N-Channel Array 20V 0.91A 0.55W Surface Mount SC-88

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