onsemi · FETs & Power MOSFETs · MPN NTJD4158CT1G
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| Current - Continuous Drain(Id) | 250mA |
|---|---|
| RDS(on) | 215mΩ@4.5V |
| Pd - Power Dissipation | 270mW |
| Gate Threshold Voltage (Vgs(th)) | 800mV;610mV |
| Drain to Source Voltage | 30V |
| Reverse Transfer Capacitance (Crss@Vds) | 7.25pF;18pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 20pF;155pF |
| Gate Charge(Qg) | 900pC@5V;2.2nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
250mA 215mΩ@4.5V 270mW 1 N-Channel + 1 P-Channel SC-88 FET, MOSFET Arrays RoHS