onsemi · FETs & Power MOSFETs · MPN NTJD4105CT2G
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| Current - Continuous Drain(Id) | 630mA;775mA |
|---|---|
| RDS(on) | 375mΩ@4.5V |
| Pd - Power Dissipation | 270mW |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 20V;8V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 46pF |
| Gate Charge(Qg) | 3nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
375mΩ@4.5V 270mW 1.5V 1 N-Channel + 1 P-Channel SOT-363 FET, MOSFET Arrays RoHS