onsemi · FETs & Power MOSFETs · MPN NTJD4105CT1G
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| Current - Continuous Drain(Id) | 910mA |
|---|---|
| RDS(on) | 360mΩ@2.5V |
| Pd - Power Dissipation | 550mW |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Drain to Source Voltage | 20V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 225pF |
| Gate Charge(Qg) | 4nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 55pF |
N-Channel+P-Channel Array 20V 0.91A 0.55W Surface Mount SOT-363