onsemi · FETs & Power MOSFETs · MPN NTJD4001NT1G
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| Current - Continuous Drain(Id) | 250mA |
|---|---|
| Pd - Power Dissipation | 272mW |
| RDS(on) | 2.5Ω@2.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 88pF |
| Gate Charge(Qg) | 1.3nC@5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 32pF |
N-Channel Array 30V 250mA 272mW Surface Mount SOT-363