onsemi · FETs & Power MOSFETs · MPN NTJD1155LT2G
No reviews yet — be the first to review onsemi NTJD1155LT2G.
| RDS(on) | 175mΩ@4.5V |
|---|---|
| Pd - Power Dissipation | - |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 8V |
| Number | 1 N-Channel + 1 P-Channel |
| Operating Temperature | -55℃~+150℃ |
175mΩ@4.5V 1V 1 N-Channel + 1 P-Channel SC-88-6 FET, MOSFET Arrays RoHS