onsemi · FETs & Power MOSFETs · MPN NTJD1155LT1G
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| Current - Continuous Drain(Id) | 1.3A |
|---|---|
| RDS(on) | 260mΩ@1.8V |
| Pd - Power Dissipation | 400mW |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 8V |
| Type | N-Channel + P-Channel |
| Number | 1 N-Channel + 1 P-Channel |
| Vgs | ±8V |
| Operating Temperature | -55℃~+150℃ |
N-Channel+P-Channel Array 8V 1.3A 0.4W Surface Mount SC-88