onsemi NTHS5404T1G

onsemi · FETs & Power MOSFETs · MPN NTHS5404T1G

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Specifications

Gate Charge(Qg)18nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)337pF
Current - Continuous Drain(Id)5.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))600mV
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)88pF
RDS(on)45mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)740pF
TypeN-Channel

Technical details

20V 5.2A 600mV 1.3W 45mΩ@2.5V 1 N-channel N-Channel 1206A Single FETs, MOSFETs RoHS

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