onsemi NTHS4111PT1

onsemi · FETs & Power MOSFETs · MPN NTHS4111PT1

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)28nC@10V
Output Capacitance(Coss)143pF
Current - Continuous Drain(Id)6.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.5W
RDS(on)75mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)105pF
Input Capacitance(Ciss)1.5nF
TypeP-Channel

Technical details

30V 6.1A 3V 2.5W 75mΩ@4.5V P-Channel Single FETs, MOSFETs

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