onsemi · FETs & Power MOSFETs · MPN NTHS4101PT1G
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| Gate Charge(Qg) | 25nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 6.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 450mV |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| RDS(on) | 42mΩ@1.8V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.1nF |
P-Channel 20V 6.7A Surface Mount SMD-8P