onsemi NTHL099N60S5

onsemi · FETs & Power MOSFETs · MPN NTHL099N60S5

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Specifications

Gate Charge(Qg)48nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)33A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation184W
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)99mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.5nF
TypeN-Channel

Technical details

N-Channel 600V 33A 184W Through Hole TO-247

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