onsemi · FETs & Power MOSFETs · MPN NTHL041N60S5H
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| Gate Charge(Qg) | 108nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 57A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.3V |
| Pd - Power Dissipation | 329W |
| RDS(on) | 41mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 155pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.84nF |
| Type | N-Channel |
600V 57A 4.3V 329W 41mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS