onsemi NTHL022N120M3S

onsemi · FETs & Power MOSFETs · MPN NTHL022N120M3S

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Specifications

Gate Charge(Qg)139nC
Drain to Source Voltage1.2kV
Output Capacitance(Coss)141pF
Current - Continuous Drain(Id)68A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.4V
Pd - Power Dissipation352W
RDS(on)30mΩ
Number1 N-channel
Input Capacitance(Ciss)3.13nF
TypeN-Channel

Technical details

1.2kV 68A 4.4V 352W 30mΩ 1 N-channel N-Channel TO-247-3LD Single FETs, MOSFETs RoHS

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