onsemi NTHD4508NT1G

onsemi · FETs & Power MOSFETs · MPN NTHD4508NT1G

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Specifications

Gate Charge(Qg)2.6nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation1.13W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)75mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)180pF
TypeN-Channel

Technical details

N-Channel Array 20V 3A 1.13W Surface Mount SMD-8P

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