onsemi · FETs & Power MOSFETs · MPN NTHD4102PT1G
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| Current - Continuous Drain(Id) | 4.1A |
|---|---|
| Pd - Power Dissipation | 1.1W |
| RDS(on) | 170mΩ@1.8V |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 20V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 750pF |
| Gate Charge(Qg) | 8.6nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
P-Channel 20V 4.1A 1.1W Surface Mount SMD-8P