onsemi · FETs & Power MOSFETs · MPN NTHC5513T1G
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| Gate Charge(Qg) | 4nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 80pF |
| Current - Continuous Drain(Id) | 3.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 1.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 80mΩ@4.5V |
| Input Capacitance(Ciss) | 185pF |
| Type | N-Channel + P-Channel |
20V 3.9A 1.2V 1.1W 80mΩ@4.5V N-Channel + P-Channel ChipFET-8 Single FETs, MOSFETs RoHS