onsemi · FETs & Power MOSFETs · MPN NTH4L160N120SC1
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| Drain to Source Voltage | 1.2kV |
|---|---|
| Gate Charge(Qg) | 34nC |
| Output Capacitance(Coss) | 49.5pF |
| Current - Continuous Drain(Id) | 17.3A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.3V |
| Pd - Power Dissipation | 111W |
| Reverse Transfer Capacitance (Crss@Vds) | 4.3pF |
| RDS(on) | 224mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 665pF |
| Type | N-Channel |
1.2kV 17.3A 4.3V 111W 224mΩ 1 N-channel N-Channel TO-247-4L Single FETs, MOSFETs RoHS