onsemi · FETs & Power MOSFETs · MPN NTH4L095N065SC1
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 50nC |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 31A |
| Output Capacitance(Coss) | 89pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.3V |
| Pd - Power Dissipation | 129W |
| Reverse Transfer Capacitance (Crss@Vds) | 7.8pF |
| RDS(on) | 105mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 956pF |
650V 31A 4.3V 129W 105mΩ 1 N-channel N-Channel TO-247-4 Single FETs, MOSFETs RoHS