onsemi NTH4L070N120M3S

onsemi · FETs & Power MOSFETs · MPN NTH4L070N120M3S

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Specifications

Gate Charge(Qg)57nC
Configuration-
Drain to Source Voltage1.2kV
Output Capacitance(Coss)57pF
Current - Continuous Drain(Id)34A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.9V
Pd - Power Dissipation80W
RDS(on)65mΩ@18V
Reverse Transfer Capacitance (Crss@Vds)5pF
Number1 N-channel
Input Capacitance(Ciss)1.23nF

Technical details

N-Channel 1.2kV 34A 80W Through Hole TO-247-4L

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