onsemi NTH4L060N090SC1

onsemi · FETs & Power MOSFETs · MPN NTH4L060N090SC1

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Specifications

Gate Charge(Qg)87nC
Drain to Source Voltage900V
Output Capacitance(Coss)113pF
Current - Continuous Drain(Id)46A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.3V
Pd - Power Dissipation221W
RDS(on)84mΩ
Reverse Transfer Capacitance (Crss@Vds)11pF
Number1 N-channel
Input Capacitance(Ciss)1.77nF
TypeN-Channel

Technical details

N-Channel 900V 46A 221W Through Hole TO-247-4L

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