onsemi · FETs & Power MOSFETs · MPN NTH4L045N065SC1
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| Gate Charge(Qg) | 105nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 162pF |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.3V |
| Pd - Power Dissipation | 187W |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF |
| RDS(on) | 50mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.87nF |
| Type | N-Channel |
N-Channel 650V 55A 187W Through Hole TO-247-4L