onsemi NTH4L040N120M3S

onsemi · FETs & Power MOSFETs · MPN NTH4L040N120M3S

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Specifications

Gate Charge(Qg)75nC
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)54A
Output Capacitance(Coss)80pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.4V
Pd - Power Dissipation231W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)54mΩ
Number1 N-channel
Input Capacitance(Ciss)1.7nF
TypeN-Channel

Technical details

N-Channel 1.2kV 54A 231W Through Hole TO-247-4

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