onsemi · FETs & Power MOSFETs · MPN NTH4L032N065M3S
No reviews yet — be the first to review onsemi NTH4L032N065M3S.
| Gate Charge(Qg) | 55nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 114pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 187W |
| RDS(on) | 44mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 9.2pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.41nF |
| Type | N-Channel |
N-Channel 650V 50A 187W Through Hole TO-247-4L