onsemi · FETs & Power MOSFETs · MPN NTH4L028N170M1
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| Gate Charge(Qg) | 200nC |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 1.7kV |
| Output Capacitance(Coss) | 200pF |
| Current - Continuous Drain(Id) | 81A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.75V |
| Pd - Power Dissipation | 535W |
| RDS(on) | 28mΩ@20V |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.23nF |
N-Channel 1.7kV 81A 535W Through Hole TO-247-4L