onsemi · FETs & Power MOSFETs · MPN NTH4L025N065SC1
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| Gate Charge(Qg) | 164nC |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 278pF |
| Current - Continuous Drain(Id) | 99A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 174W |
| RDS(on) | 19mΩ@18V |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.48nF |
N-Channel 650V 99A 174W Through Hole TO-247-4L