onsemi · FETs & Power MOSFETs · MPN NTH4L020N120SC1
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 102A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 510W |
| Reverse Transfer Capacitance (Crss@Vds) | 24pF |
| RDS(on) | 20mΩ@20V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.943nF |
1.2kV 102A 1.8V 510W 20mΩ@20V 1 N-channel TO-247-4 Single FETs, MOSFETs RoHS