onsemi · FETs & Power MOSFETs · MPN NTH4L020N090SC1
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| Gate Charge(Qg) | 196nC |
|---|---|
| Drain to Source Voltage | 900V |
| Output Capacitance(Coss) | 296pF |
| Current - Continuous Drain(Id) | 116A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.3V |
| Pd - Power Dissipation | 484W |
| RDS(on) | 28mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 24pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.415nF |
| Type | N-Channel |
N-Channel 900V Through Hole TO-247-4L