onsemi NTH4L014N120M3P

onsemi · FETs & Power MOSFETs · MPN NTH4L014N120M3P

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Specifications

Gate Charge(Qg)329nC
Configuration-
Drain to Source Voltage1.2kV
Output Capacitance(Coss)262pF
Current - Continuous Drain(Id)127A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation343W
RDS(on)14mΩ@18V
Reverse Transfer Capacitance (Crss@Vds)29pF
Number1 N-channel
Input Capacitance(Ciss)6.23nF

Technical details

N-Channel 1.2kV 127A 343W Through Hole TO-247-4L

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