onsemi · FETs & Power MOSFETs · MPN NTH4L013N120M3S
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| Gate Charge(Qg) | 254nC |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 151A |
| Output Capacitance(Coss) | 262pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.4V |
| Pd - Power Dissipation | 682W |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| RDS(on) | 13mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.813nF |
| Type | N-Channel |
1.2kV 151A 4.4V 682W 13mΩ 1 N-channel N-Channel TO-247-4L Single FETs, MOSFETs RoHS