onsemi NTGS5120PT1G

onsemi · FETs & Power MOSFETs · MPN NTGS5120PT1G

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Specifications

Gate Charge(Qg)18.1nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)2.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.4W
RDS(on)142mΩ@4.5V
Number1 P-Channel
TypeP-Channel

Technical details

P-Channel 60V 2.9A 1.4W Surface Mount TSOP-6

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