onsemi · FETs & Power MOSFETs · MPN NTGD4167CT1G
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| Current - Continuous Drain(Id) | 2.6A |
|---|---|
| RDS(on) | 300mΩ@2.5V |
| Pd - Power Dissipation | 900mW |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 30V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 419pF |
| Gate Charge(Qg) | 6nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 51pF |
N-Channel+P-Channel Array 30V 2.6A 0.9W Surface Mount TSOP-6